Substrates

MCV offers a wide section of High K substrates exhibiting low loss, excellent temperature stability, and high density with tight dielectric constant εr tolerance from εr 9.0 to 325. They are ideally suited for microwave integrated circuits and high Q capacitors. These substrates are available either as bare ceramic or with thick or thin film metallization.

Grain Boundary barrier layer (GBBL) substrates are often used in Single Layer Ceramic Capacitor (SLCC) designs. Dielectric constants in 30,000~50,000 and 90,000~100,000 are available with X7R and X7S temperature performance, from -55°C to +125°C. Electrical characteristics, as outlined in MIL-C-49464, will meet those specified for class II dielectrics. MCV GBBL substrates exhibit ultra-high K, extremely low ESR, low insertion loss, and excellent voltage handling capability up to 40 GHz for DC block, RF bypass, source bypass and impedance matching microwave applications.

wdt_ID	Part Number	Dielectric Constant	Tj Temperature Coefficient Tolerance (ppm/oC)	Qf Values
1	MDS-9	9±1	6±5	>58,[email protected]
2	MDS-21	21±1	5±5	>60,[email protected]
3	MDS-24	24±1	1~3±1	>300,000@10GHz
4	MDS-30	30±1	0±2	>150,000@10GHz
5	MDS-34	34±1	2~3±1	>150,000@10GHz
6	MDS-36	36±2	0±5	>30,000@5GHz
7	MDS-38	38±1	0.7±0.5	>47,000@5GHz
8	MDS-40	40±1	3±5	>70,000@5GHz
9	MDS-45	45±1	-2~6±0.5	>43,000@6GHz
10	MDS-47	47±1	0±10	>46,000@6GHz
11	MDS-70	72±1	0±2	>9,[email protected]
12	MDS-77M	77±1	-1~5±2	>10,[email protected]
13	MDS-88M	80±1	-1~5±2	>8,[email protected]
14	MDS-90	93±1	9±4	>6,000@3GHz
15	MDS-90N	93±1	9±4	>5,800@3GHz
16	MDS-96	98±2	10±4	>4,[email protected]
17	MDS-113	113±3	20±10	>3,000@2GHz
18	MDS-190	194±3	25±10	>1,300@3GHz
19	MDS-325	4000±500	±10%	tan∂1%
	Part Number	Dielectric Constant	Tj Temperature Coefficient Tolerance (ppm/oC)	Qf Values